Two-Dimensional Numerical Simulation of AlGaN/GaN HEMTs
نویسندگان
چکیده
The GaN material system is modeled and introduced in the two-dimensional device simulation tool MinimosNT. The simulation setup is calibrated against measurement data from AlGaN/GaN HEMTs. Further, the impact of gate field plates on the electric field distribution in the channel for different geometry setups is investigated.
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